1 n-channel 30-v (d-s) mosfet features ? halo gen-free ? t re nchfet ? power mosfet ? 100 % r g tested ? 100 % uis tested applications ? low-si de switch ? notebook dc/dc product summary v ds (v) r ds(on) ( ) i d (a ) a q g (typ .) 30 0.0057 at v gs = 10 v 40 1 3.8 nc 0.0076 at v gs = 4.5 v 40 n -c hannel m os fet g d s notes: a. based on t c = 25 c . package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. absolute maximum ratings t a = 25 c , unless otherwise noted pa rameter symbol limit unit dr ain-source v oltage v ds 30 v gate-source v o ltage v gs 20 continuous dr ain current (t j = 150 c) t c = 25 c i d 40 a a t c = 70 c 40 a t a = 25 c 22.7 b, c t a = 70 c 19.7 b, c pulsed drai n cu rrent i dm 70 a v alanche c u rrent l = 0.1 mh i as 35 avalanche energ y e as 61 mj continuous sour ce-dr ain diode current t c = 25 c i s 40 a a t a = 25 c 4.1 b, c maxi mum power dissipation t c = 25 c p d 50 w t c = 70 c 32 t a = 25 c 5 b, c t a = 70 c 3.2 b, c operating j unction and storage temperature range t j , t stg - 55 to 150 c solderin g recommendations (p eak temperature) d, e 260 thermal resist ance rat i ngs p arameter symbol t yp ical maximum un it maxim um junction-to-ambient b, f t 10 s r thja 20 25 c/ w maxim um junction-to-case (drain) steady state r thjc 2.0 2.5 rohs compliant to-251 s d g top view www.din-tek.jp dtl 40n03
2 not e s: a. p ulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not s ubject to production testing. stresses b eyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted param eter sym bol test conditions min. typ. max. un it static drain-source breakdown v oltage v ds v gs = 0 v , i d = 250 a 30 v v ds t emper ature coefficient ' v ds /t j i d = 250 a 27 mv /c v gs(t h) temperature co efficient ' v gs(t h) /t j - 5.5 gate-s o urce threshold voltage v gs( t h) v ds = v gs , i d = 250 a 13 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 1 0 0 na zero gate voltage drain current i dss v ds = 30 v , v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 55 c 5 on-state dr ain current a i d(on) v ds t 5 v, v gs = 10 v 50 a drain-source on-state re sista nce a r ds(on) v gs 10 v, i d = 20 a 0.0047 0 .0057 : v gs 4.5 v , i d = 18 a 0.0062 0 .0076 f orward transconductance a g fs v ds = 15 v, i d = 20 a 90 s dynam i c b input capacita n ce c iss v ds = 1 5 v, v gs = 0 v, f = 1 mhz 17 20 pf output capacitance c oss 355 re v erse transfer capacitance c rss 130 t o tal gate charge q g v ds = 15 v , v gs = 10 v , i d = 20 a 29 44 nc v ds = 15 v, v gs = 4.5 v, i d = 20 a 13.8 21 gate-so urce charge q gs 5.0 gate-dr a in charge q gd 4.6 gate re sistance r g f = 1 mhz 1 .1 2.2 : tu r n - o n d e l ay t i m e t d( o n) v dd = 15 v, r l = 15 : i d # 1.0 a, v gen = 4.5 v, r g = 1 : 25 4 0 ns rise time t r 14 2 5 t urn-off delay time t d(off) 30 4 5 fa ll time t f 15 2 5 tu r n - o n d e l ay t i m e t d(o n) v dd = 15 v, r l = 15 : i d # 1.0 a, v gen = 10 v , r g = 1 : 11 2 0 rise time t r 915 t ur n-off delay time t d(off) 27 4 0 fa ll time t f 915 drain- so urce body diode characteristics continuous source-drain diode current i s t c = 25 c 40 a pulse diod e forward current i sm 70 body diode v o ltage v sd i s = 4.1 a, v gs 0 v 0.75 1.2 v body diode re verse recovery time t rr i f = 4.1 a, di/dt = 100 a/ s, t j = 25 c 25 5 0 ns body diode reverse recovery charge q rr 17 35 nc reverse recovery fall time t a 13 ns re v erse reco very rise time t b 12 z z z g l q w h n m s ' 7 / 1
3 typica l c har acteristics 25 c, unless otherwise noted output characteristics on-re sistance vs. drain current and gate voltage gate charge 0 10 20 30 40 50 60 70 0.0 0.5 1.0 1.5 2.0 v gs =1 0t h r u 4 v v gs =3 v v ds - drain - to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.003 0.004 0.005 0.006 0.007 0.00 8 0 1 02 03040506070 v gs =10 v v gs =4.5 v - on- r esistance ( ) r ds(on) i d - drain c u rrent (a) 0 2 4 6 8 10 0 6 12 1 8 24 30 v ds =22 . 5 v i d =2 0a v ds =7. 5 v v ds =15 v - gate-t o-so u rce v oltage ( v ) q g - t otal gate charge (nc) v gs transfer characteristics cap acitance on-resistance vs. junction temperature 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t c = 25 c t c = 125 c t c = - 55 c v gs - g ate -to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 600 1200 1 8 00 2400 0 6 12 1 8 24 30 c iss c oss c rss v ds - drain - to-so u rce v oltage ( v ) c - capacitance (pf) 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 v gs =10 v v gs =4 . 5 v i d =20a t j -j u nction t emperat u re (c) ( n ormalized) - on- r esistance r ds(on) www.din-tek.jp dtl 40n03
4 ty pi cal ch aracteristics 25 c, unless otherwise noted sour ce-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 150 c t j = - 50 c t j = 25 c v sd -so u rce - to-drain v oltage ( v ) - so u rce c u rrent (a) i s - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a i d =1ma v ariance ( v ) v gs(t h) t j - t emperat u re (c) on-re sistan ce vs. gate-to-source voltage single pulse power (junction-to-ambient) 0.000 0.005 0.010 0.015 0.020 0.025 0.030 012345 67 8 91 0 t j = 25 c t j = 125 c - on- r esistance ( ) r ds(on ) v gs - gate -to-so u rce v oltage ( v ) 0 40 8 0 120 160 200 0 1 1 1 00. 00 . 0 1 time (s) po w er ( w ) 0.1 safe op erating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p u lse limited b yr ds(on) * b v dss limited 1ms 100 s 10 ms 100 ms 1s 10 s 100 s dc v ds - drain - to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d www.din-tek.jp dtl 40n03
5 typica l c har acteristics 25 c, unless otherwise noted * th e power dissipation p d is ba se d on t j(max) = 150 c , using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 20 40 60 8 0 0 25 50 75 100 125 150 package limited t c - case t emperat u re (c) i d - drain c u rrent (a) powe r, ju nction-to-case 0 12 24 36 4 8 60 0 25 50 75 100 125 150 t c - case t emperat u re (c) po w er ( w ) powe r, junction-to-ambient 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 t a -am b ient t emperat u re (c) po w er ( w ) www.din-tek.jp dtl 40n03
6 ty pi cal ch aracteristics 25 c, unless otherwise noted normalized t h ermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 s qu are w a v ep u lse d u ration (s) n ormalized ef fecti v e transient thermal impedance 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 70 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rfac e mo u nted d u ty c ycle = 0.5 0.02 nor m alized thermal transient impedance, junction-to-case 1 0.1 0.01 0.2 d u ty c ycle = 0.5 s qu are w a v ep u lse d u ration (s) n ormalized ef fecti v e transient thermal impedance 10 -3 10 -2 1 10 -1 10 -4 0.05 0.02 single p u lse 0.1 www.din-tek.jp dtl 40n03
note: dimension l3 is for reference only. l2 b1 b b2 e l3 l1 l d c a1 c1 a e 1
dim min max min max a 2.21 2.38 0.087 0.094 a1 0.89 1.14 0.035 0.045 b 0.71 0.89 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.43 0.206 0.214 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 e 6.48 6.73 0.255 0.265 e 2.28 bs c 0.090 bsc l 8.89 9.53 0.350 0.375 l1 1.91 2.28 0.075 0.090 l2 0.89 1.27 0.035 0.050 l3 1.15 1.52 0.045 0.060 ecn: s-03946?rev. e, 09-jul-01 dwg: 5346 www. g d \ v h p l m s package information www.din-tek.jp
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